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K522H1HACF-B050 Datasheet 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

Manufacturer: Samsung Semiconductor

Overview

Rev.

1.0, Oct.

2010 K522H1HACF-B050 MCP Specification 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Key Features

  • Operating Temperature : -25°C ~ 85°C.
  • Package : 153ball FBGA Type - 8x9x1.0mmt, 0.5mm pitch.
  • Voltage Supply : 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (256M + 8M) x 8bit for 2Gb (512M + 16M) x 8bit for 4Gb DDP - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 40μs(Max. ) -.