K522H1HACF-B050 Datasheet | Samsung Semiconductor

Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. .. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- K522H1HACF-B050 datasheet History Draft Date Oct. 21, 2010 Rev. 1.0 MCP Memory Revision History Revision No. 1.0 Remark Final Editor K.N.Kang Initial issue. - 2Gb NAND Flash W-die_ Ver 1.0 - 1Gb Mobile DDR F-die_ Ver 1.0 .. -2- K522H1HACF-B050 datasheet Rev. 1.0 MCP Memory 1. Features <mon> - Operating Temperature : -25°C ~ 85°C - Package : 153ball FBGA Type - 8x9x1.0mmt, 0.5mm pitch <NAND Flash> - Voltage Supply : 1.7V ~ 1.95V - Organization - Memory Cell Array : (256M + 8M) x 8bit for 2Gb (512M + 16M) x 8bit for 4Gb DDP - Data Register : (2K + 64) x 8bit - Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase :...