K524G2GACB-A050 Overview
K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS...
K524G2GACB-A050 Key Features
- Operating Temperature : -25°C ~ 85°C
- Package : 137-ball FBGA Type
- 10.5 x 13 x 1.2mmt, 0.8mm pitch <NAND Flash>
- Voltage Supply : 1.7V ~ 1.95V
- Organization
- Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP
- Data Register : (1K + 32) x 16bit
- Automatic Program and Erase
- Page Program : (1K + 32)Word
- Block Erase : (64K + 2K)Word
K524G2GACB-A050 Applications
- Samsung Electronics reserves the right to change products or specification without notice