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K6E0808C1E-L - 32K x 8 Bit High-Speed CMOS Static RAM

General Description

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 10, 12, 15ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 2mA(Max. ) 0.6mA(Max. ) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max. ) K6E0808C1E-12 : 80mA(Max. ) K6E0808C1E-15 : 80mA(Max. ).
  • Single 5.0V±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention : L-Ve.

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Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K6E0808C1E-C 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C10 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C12 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C15 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-I 32K x 8 Bit High-Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.