K6F2016U4E - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Datasheet Details

Part number	K6F2016U4E
Manufacturer	Samsung semiconductor
File Size	158.46 KB
Description	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F2016U4E_Samsungsemiconductor.pdf

The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

📁 K6F2016U4E Similar Datasheet

K6F1008R2M - SRAM (Samsung Electronics)
K6F1008S2M - SRAM (Samsung Electronics)
K6F1008V2M - SRAM (Samsung Electronics)
K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)

Other Datasheets by Samsung semiconductor

K6F2016U4E-F - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4G - 2Mb(128K x 16 bit) Low Power SRAM
K6F2016V4D - CMOS SRAM
K6F2008T2E - 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF70 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Published: Apr 7, 2005 |