K6F2016U4E
FEATURES
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CMOS SRAM
GENERAL DESCRIPTION
The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5µA2) Operating (ICC1, Max) 2m A PKG Type
K6F2016U4E-F
Industrial(-40~85°C)
2.7~3.3V
551)/70ns
48-TBGA-6.00x7.00
1. The parameter is measured with 30p F test load. 2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
PIN DESCRIPTION
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