• Part: K6F2016U4E-F
  • Description: 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • Manufacturer: Samsung Semiconductor
  • Size: 158.46 KB
Download K6F2016U4E-F Datasheet PDF
Samsung Semiconductor
K6F2016U4E-F
K6F2016U4E-F is 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM manufactured by Samsung Semiconductor.
K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary Final September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG...
K6F2016U4E-F datasheet preview

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