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K6F2016U4G Datasheet

Manufacturer: Samsung Semiconductor
K6F2016U4G datasheet preview

Datasheet Details

Part number K6F2016U4G
Datasheet K6F2016U4G_Samsungsemiconductor.pdf
File Size 187.03 KB
Manufacturer Samsung Semiconductor
Description 2Mb(128K x 16 bit) Low Power SRAM
K6F2016U4G page 2 K6F2016U4G page 3

K6F2016U4G Overview

The K6F2016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.

K6F2016U4G Key Features

  • Preliminary CMOS SRAM

K6F2016U4G Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

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K6F2008T2E 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF70 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F2008V2E-LF55 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E-LF70 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E-YF55 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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