| Part number | K6F2016U4E |
|---|---|
| Datasheet | K6F2016U4E_Samsungsemiconductor.pdf |
| File Size | 158.46 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K6F2016U4E-F | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2016U4G | 2Mb(128K x 16 bit) Low Power SRAM |
| K6F2016V4D | CMOS SRAM |
| K6F2008T2E | 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF55 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF70 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E-LF55 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E-LF70 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E-YF55 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
