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K6F2008T2E - 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description

The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support industrial temperature ranges for user flexibility of system design.

The families also supports low data retention voltage for battery back-up operation with low data retention current.

Features

  • Process Technology: Full CMOS.
  • Organization: 256Kx8.
  • Power Supply Voltage: 2.7 ~ 3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 32-TSOP1-0813.4F Preliminary CMOS SRAM www. DataSheet4U. com.

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Datasheet Details

Part number K6F2008T2E
Manufacturer Samsung semiconductor
File Size 128.30 KB
Description 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F2008T2E Datasheet
Additional preview pages of the K6F2008T2E datasheet.

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Full PDF Text Transcription

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K6F2008T2E Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date June 16 , 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 June 2003 K6F2008T2E Family 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 2.7 ~ 3.6V • Low Data Retention Voltage: 1.
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