K6F2008T2E

K6F2008T2E is 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM manufactured by Samsung Semiconductor.

K6F2008T2E Datasheet

Part number	K6F2008T2E
Download	K6F2008T2E Datasheet (PDF)
File Size	128.30 KB
Manufacturer	Samsung Semiconductor
Description	256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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K6F2008T2E Distributor

K6F2008T2E Description

The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

K6F2008T2E Key Features

Process Technology: Full CMOS
Organization: 256Kx8
Power Supply Voltage: 2.7 ~ 3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 32-TSOP1-0813.4F

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