K6F2008V2E-LF55 Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K6F2008V2E-LF55
Datasheet	K6F2008V2E-LF55_Samsungsemiconductor.pdf
File Size	134.49 KB
Manufacturer	Samsung Semiconductor
Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008V2E-LF55 Overview

The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

K6F2008V2E-LF55 Key Features

Process Technology: Full CMOS
Organization: 256Kx8
Power Supply Voltage: 3.0 ~ 3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)

More Datasheets from Samsung Semiconductor

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K6F2008V2E-LF70	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E-YF55	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E-YF70	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008T2E	256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF70	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4E	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4E-F	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4G	2Mb(128K x 16 bit) Low Power SRAM

Datasheet Details

K6F2008V2E-LF55 Overview

K6F2008V2E-LF55 Key Features

More Datasheets from Samsung Semiconductor

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