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K6F2008V2E-YF55 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support industrial temperature ranges for user flexibility of system design.

The families also supports low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 256Kx8.
  • Power Supply Voltage: 3.0 ~ 3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF) CMOS SRAM.

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Full PDF Text Transcription for K6F2008V2E-YF55 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F2008V2E-YF55. For precise diagrams, and layout, please refer to the original PDF.

K6F2008V2E Family Document Title CMOS SRAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 1.1 Initial draft...

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ic RAM Revision History Revision No. History 0.0 1.0 1.1 Initial draft Finalize Draft Date July 19 , 2001 September 27, 2001 Remark Preliminary Final Final Revised May 13, 2003 - Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package. The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

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