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K6F2016V4D - CMOS SRAM

Features

  • Process Technology: Full CMOS.
  • Organization: 128K x16 bit.
  • Power Supply Voltage: 3.0~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output status and TTL Compati.

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Datasheet Details

Part number K6F2016V4D
Manufacturer Samsung semiconductor
File Size 105.57 KB
Description CMOS SRAM
Datasheet download datasheet K6F2016V4D Datasheet
Additional preview pages of the K6F2016V4D datasheet.

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Full PDF Text Transcription

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K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ : 25 to 20ns for 70ns product - Change for tDW : 20 to 25ns for 55ns product Draft Date January 6, 2000 May 4, 2000 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.
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