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K6F2016V4D Datasheet

Manufacturer: Samsung Semiconductor
K6F2016V4D datasheet preview

K6F2016V4D Details

Part number K6F2016V4D
Datasheet K6F2016V4D-Samsungsemiconductor.pdf
File Size 105.57 KB
Manufacturer Samsung Semiconductor
Description CMOS SRAM
K6F2016V4D page 2 K6F2016V4D page 3

K6F2016V4D Overview

K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ.

K6F2016V4D Key Features

  • Process Technology: Full CMOS
  • Organization: 128K x16 bit
  • Power Supply Voltage: 3.0~3.6V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three state output status and TTL pati

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