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K6F2016V4D - CMOS SRAM

Key Features

  • Process Technology: Full CMOS.
  • Organization: 128K x16 bit.
  • Power Supply Voltage: 3.0~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output status and TTL Compati.

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Full PDF Text Transcription for K6F2016V4D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F2016V4D. For precise diagrams, and layout, please refer to the original PDF.

K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 F...

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atic RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ : 25 to 20ns for 70ns product - Change for tDW : 20 to 25ns for 55ns product Draft Date January 6, 2000 May 4, 2000 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.

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