K6F2016V4D Key Features
- Process Technology: Full CMOS
- Organization: 128K x16 bit
- Power Supply Voltage: 3.0~3.6V
- Low Data Retention Voltage: 1.5V(Min)
- Three state output status and TTL pati
- Part: K6F2016V4D
- Manufacturer: Samsung Semiconductor
- Size: 105.57 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F2016U4E | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2016U4E-F | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2016U4G | 2Mb(128K x 16 bit) Low Power SRAM |
| K6F2008T2E | 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF55 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F2016V4D Description
K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ.