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K6F4016R4E-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

This page provides the datasheet information for the K6F4016R4E-F, a member of the K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM family.

Datasheet Summary

Description

The K6F4016R4E families are fabricated by SAMSUNG′s advan

Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 1.65~2.20V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

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Datasheet preview – K6F4016R4E-F

Datasheet Details

Part number K6F4016R4E-F
Manufacturer Samsung semiconductor
File Size 146.99 KB
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F4016R4E-F Datasheet
Additional preview pages of the K6F4016R4E-F datasheet.

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Full PDF Text Transcription

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K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.com Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize Draft Date Remark November 10, 2000 Preliminary March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 March 2001 K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.
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