K6F4016R4G Overview
256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type:.
K6F4016R4G Key Features
- CMOS SRAM
- 2Revision 0.0 November 2003
K6F4016R4G datasheet by SAMSUNG Electronics.
| Part number | K6F4016R4G |
|---|---|
| Datasheet | K6F4016R4G_SAMSUNGElectronics.pdf |
| File Size | 151.44 KB |
| Manufacturer | SAMSUNG Electronics |
| Description | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type:.
View K6F4016R4G-F datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| K6F4016R4G-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | |
| K6F4016R4E | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | |
| K6F4016R4E-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
View all SAMSUNG Electronics datasheets
| Part Number | Description |
|---|---|
| K6F1008R2M | SRAM |
| K6F1008S2M | SRAM |
| K6F1008V2M | SRAM |