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K6F4016R4G Datasheet 256k X16 Bit Super Low Power And Low Voltage Full CMOS Static Ram

Manufacturer: SAMSUNG Electronics

Overview: Preliminary K6F4016R4G Family Document Title CMOS SRAM .. 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date November 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.

Datasheet Details

Part number K6F4016R4G
Manufacturer SAMSUNG Electronics
File Size 151.44 KB
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F4016R4G_SAMSUNGElectronics.pdf

General Description

Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The family also supports low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • CMOS SRAM www. DataSheet4U. com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM.

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