K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Product Overview

Datasheet Details

Part number	K6F4016R4G
Manufacturer	SAMSUNG Electronics
File Size	151.44 KB
Description	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F4016R4G Datasheet
Additional preview pages of the K6F4016R4G datasheet.

Product details

Description

Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention cu

Features

CMOS SRAM www. DataSheet4U. com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM.

📁 Similar Datasheet

K6F4016R4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016R4E - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016R4E-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016U4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016U4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016U6G - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4016U6G-F - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)
K6F4008R2C - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

Other Datasheets by SAMSUNG Electronics

Published: Jun 15, 2010 |