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K6F4016R4E

Manufacturer: Samsung Semiconductor

K6F4016R4E datasheet by Samsung Semiconductor.

K6F4016R4E datasheet preview

K6F4016R4E Datasheet Details

Part number K6F4016R4E
Datasheet K6F4016R4E_Samsungsemiconductor.pdf
File Size 146.99 KB
Manufacturer Samsung Semiconductor
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E page 2 K6F4016R4E page 3

K6F4016R4E Overview

The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6F4016R4E Key Features

  • CMOS SRAM
  • 2Revision 1.0 March 2001

K6F4016R4G from other manufacturers

View K6F4016R4G datasheet index

Brand Logo Part Number Description Other Manufacturers
SAMSUNG Electronics K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F4016U4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U6G 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U6G-F 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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