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K6F4016R4E - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

Key Features

  • CMOS SRAM www. DataSheet4U. com.

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Other Datasheets by Samsung Semiconductor

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K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U6G 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6F4016R4E Family Document Title CMOS SRAM www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize Draft Date November 10, 2000 March 12, 2001 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 March 2001 K6F4016R4E Family FEATURES • • • • • • CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology.