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K6F4016R4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download the K6F4016R4G-F datasheet PDF. This datasheet also covers the K6F4016R4G variant, as both devices belong to the same 256k x16 bit super low power and low voltage full cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6F4016R4G families are fabricated by SAMSUNG′s advanced

Key Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 1.65~1.95V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6F4016R4G_SAMSUNGElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6F4016R4G Family Preliminary CMOS SRAM Document Title www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 November 2003 K6F4016R4G Family Preliminary CMOS SRAM www.DataSheet4U.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply Voltage: 1.