K6F4016R4G-F Key Features
- Process Technology: Full CMOS
- Organization: 256K x16 bit
- Power Supply Voltage: 1.65~1.95V
- Low Data Retention Voltage: 1.0V(Min)
- Three State Outputs
- Package Type: 48-TBGA-6.00x7.00
- Part: K6F4016R4G-F
- Manufacturer: Samsung Semiconductor
- Size: 151.44 KB
Other K6F4016R4G-F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| SAMSUNG Electronics SAMSUNG Electronics |
K6F4016R4G | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4016R4G-F Description
The K6F4016R4G families are fabricated by SAMSUNG′s advanced.