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K6F4016R4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

This page provides the datasheet information for the K6F4016R4G-F, a member of the K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM family.

Datasheet Summary

Description

The K6F4016R4G families are fabricated by SAMSUNG′s advanced

Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 1.65~1.95V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

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Datasheet preview – K6F4016R4G-F

Datasheet Details

Part number K6F4016R4G-F
Manufacturer Samsung semiconductor
File Size 151.44 KB
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F4016R4G-F Datasheet
Additional preview pages of the K6F4016R4G-F datasheet.

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Full PDF Text Transcription

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K6F4016R4G Family Preliminary CMOS SRAM Document Title www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 November 2003 K6F4016R4G Family Preliminary CMOS SRAM www.DataSheet4U.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply Voltage: 1.
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