K6R1004C1C - High-Speed CMOS Static RAM

Samsung semiconductor

The K6R1004C1C by Samsung semiconductor is a High-Speed CMOS Static RAM. Below is the official datasheet preview.

Datasheet Details

Part number	K6R1004C1C
Manufacturer	Samsung semiconductor
File Size	126.75 KB
Description	High-Speed CMOS Static RAM
Datasheet	K6R1004C1C_Samsungsemiconductor.pdf
Additional preview pages of the K6R1004C1C datasheet.

The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits.

Fast Access Time 10,12,15ns(Max. ).
Low Power Dissipation Standby (TTL) : 30mA(Max. ) (CMOS) : 5mA(Max. ) 0.5mA(Max. ) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max. ) K6R1004C1C-12 : 70mA(Max. ) K6R1004C1C-15 : 68mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention: L-ver.

📁 K6R1004C1C Similar Datasheet

Other Datasheets by Samsung semiconductor

K6R1004C1D - CMOS SRAM
K6R1004V1D - CMOS SRAM
K6R1008C1A-C12 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1A-C15 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1A-C20 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1A-I12 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Published: Feb 8, 2007 |