Datasheet4U Logo Datasheet4U.com

K6R1004V1D - CMOS SRAM

📥 Download Datasheet

Datasheet preview – K6R1004V1D

Datasheet Details

Part number K6R1004V1D
Manufacturer Samsung semiconductor
File Size 129.59 KB
Description CMOS SRAM
Datasheet download datasheet K6R1004V1D Datasheet
Additional preview pages of the K6R1004V1D datasheet.

📁 Similar Datasheet

  • K6R4008C1C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-C - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-E - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4008C1C-I - 512K x 8bit High Speed Static CMOS SRAM (Samsung)
  • K6R4016C1D - CMOS SRAM (Samsung)
Other Datasheets by Samsung semiconductor
  • K6R1004C1C - High-Speed CMOS Static RAM
  • K6R1004C1D - CMOS SRAM
  • K6R1008C1A-C12 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  • K6R1008C1A-C15 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  • K6R1008C1A-C20 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  • K6R1008C1A-I12 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  • K6R1008C1A-I15 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  • K6R1008C1A-I20 - 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Full PDF Text Transcription

Click to expand full text
K6R1004V1D PRELIMINARY PRELIfMorINAAT&RTY CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify Rev. 1.0 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous ICC(Industrial) 8ns 10ns 100mA 85mA Current 90mA 75mA Draft Data Remark May. 11. 2001 June. 18. 2001 September. 9. 2001 Preliminary Preliminary Preliminary December. 18. 2001 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
Published: |