K6R1008V1B-I Overview
Key Features
- Fast Access Time 8,10,12ns(Max.)
- Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.)
- Single 3.3±0.3V Power Supply
- TTL Compatible Inputs and Outputs
- Fully Static Operation
| Part | K6R1008V1B-I |
|---|---|
| Description | 128Kx8 Bit High Speed Static RAM |
| Manufacturer | Samsung Semiconductor |
| Size | 153.80 KB |
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