Part K6R1008V1B-I
Description 128Kx8 Bit High Speed Static RAM
Manufacturer Samsung Semiconductor
Size 153.80 KB
Samsung Semiconductor
K6R1008V1B-I

Overview

  • Fast Access Time 8,10,12ns(Max.)
  • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K6R1008V1B-10 : 155mA(Max.) K6R1008V1B-12 : 150mA(Max.)
  • Single 3.3±0.3V Power Supply
  • TTL Compatible Inputs and Outputs
  • Fully Static Operation - No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention ; L-Ver. only
  • Center Power/Ground Pin Configuration
  • Stand