Download K6R1008V1B-I Datasheet PDF
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K6R1008V1B-I Key Features

  • Fast Access Time 8,10,12ns(Max.)
  • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.)
  • Single 3.3±0.3V Power Supply
  • TTL patible Inputs and Outputs
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention ; L-Ver. only
  • Center Power/Ground

Related Samsung Semiconductor Datasheets

Part Number Description
K6R1008V1B-C 128Kx8 Bit High Speed Static RAM
K6R1008V1B-L 128Kx8 Bit High Speed Static RAM
K6R1008V1B-P 128Kx8 Bit High Speed Static RAM
K6R1008V1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1A-C12 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

K6R1008V1B-I Description

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology.