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K6R1016V1D Datasheet, Samsung semiconductor

K6R1016V1D Datasheet, Samsung semiconductor

K6R1016V1D

datasheet Download (Size : 259.83KB)

K6R1016V1D Datasheet

K6R1016V1D ranges. equivalent, 64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges..

K6R1016V1D

datasheet Download (Size : 259.83KB)

K6R1016V1D Datasheet

Features and benefits


* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1016V1D- 08: 80mA(Max.) K6R1016V1D-10: 65mA(Max.

Application

The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. 64K x 16 Bit High-Speed CMOS St.

Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cy.

Image gallery

K6R1016V1D Page 1 K6R1016V1D Page 2 K6R1016V1D Page 3

TAGS

K6R1016V1D
64Kx16
Bit
High-Speed
CMOS
Static
RAM3.3V
Operating
Operated
Commercial
and
Industrial
Temperature
Ranges.
Samsung semiconductor

Manufacturer


Samsung semiconductor

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