K6R1016V1D Datasheet - Samsung semiconductor

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016V1D Features

* Fast Access Time 8,10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1016V1D- 08: 80mA(Max.) K6R1016V1D-10: 65mA(Max.)

* Single 3.3V Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No Cl

K6R1016V1D General Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte acce.

K6R1016V1D Datasheet (259.83 KB)

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Datasheet Details

Part number:

K6R1016V1D

Manufacturer:

Samsung semiconductor

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259.83 KB

Description:

64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges..
K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. for AT&T CM.

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K6R1016V1D 64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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K6R1016V1D Features

K6R1016V1D General Description

Datasheet Details

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