K6R4004V1D Datasheet | Samsung Semiconductor

Document Title 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at mercial and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 Rev. 1.0 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(mercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110m A 90m A 80m A 70m A 130m A 115m A 100m A 85m A 30m A 0.5m A Current 80m A 65m A 55m A 45m A 100m A 85m A 75m A 65m A 20m A 1.2m A Nov.23. 2001 Preliminary Draft Data Aug. 20. 2001 Sep. 19. 2001 Nov. 3. 2001 Remark Preliminary Preliminary Preliminary ICC(Industrial) ISB ISB1(L-ver.) Rev. 0.3 1. Correct AC parameters : Read & Write Cycle m A 2. Delete Low Ver. 3. Delete Data Retention Characteristics Rev. 1.0 1. Delete 12ns,15ns speed bin. 2. Change Icc for Industrial mode. Item 8ns ICC(Industrial) 10ns 1. Add the Lead Free Package type. Dec.18. 2001 Previous 100m A 85m A Current 90m A 75m A July. 26, 2004 Final Rev. 2.0 Final .. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 2.0 July 2004 4Mb Async. Fast SRAM Ordering Information Org. 1M x4 K6R4004V1D-J(K)C(I) 08/10 K6R4008C1D-J(K,T,U)C(I) 10 512K x8 K6R4008V1D-J(K,T,U)C(I) 08/10 K6R4016C1D-J(K,T,U,E)C(I) 10 256K x16 K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10 3.3 5 3.3 8/10 10 8/10 3.3 5 8/10 10 Part Number K6R4004C1D-J(K)C(I) 10 VDD(V) 5 Speed ( ns ) 10 PKG J : 32-SOJ K : 32-SOJ(LF) PRELIMINARY CMOS SRAM Temp. & Power C : mercial Temperature ,Normal Power Range I : Industrial Temperature J : 36-SOJ K : 36-SOJ(LF) ,Normal Power Range T : 44-TSOP2 L : mercial Temperature U : 44-TSOP2(LF) ,Low Power Range P :...