Datasheet4U Logo Datasheet4U.com

K6R4004V1D - 1Mx4 Bit High Speed Static RAM

General Description

The K6R4004V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits.

The K6R4004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 8,10ns(Max. ).
  • Low Power Dissipation Standby (TTL) :20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4004V1D-08: 80mA(Max. ) K6R4004V1D-10: 65mA(Max. ).
  • Single 3.3±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.
  • Standard Pin Configuration K6R4004V1D-J: 32-SOJ-400 K6R4004V1D-K: 32-SOJ-400(Lead-Free.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4016C1D CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K6R4004V1D 1Mx4 Bit High Speed Static RAM
K6R4004C1C-C 1Mx4 Bit High Speed Static RAM
K6R4004C1C-E 1Mx4 Bit High Speed Static RAM
K6R4004C1C-I 1Mx4 Bit High Speed Static RAM
K6R4004C1D 1Mx4 Bit High Speed Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 Rev. 1.0 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Preliminary Draft Data Aug. 20. 2001 Sep. 19. 2001 Nov. 3. 2001 Remark Preliminary Preliminary Preliminary ICC(Industrial) ISB ISB1(L-ver.) Rev. 0.3 1. Correct AC parameters : Read & Write Cycle mA 2. Delete Low Ver. 3. Delete Data Retention Characteristics Rev. 1.0 1. Delete 12ns,15ns speed bin. 2.