* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating K6R4008V1C-10 : 155mA(Max.) K6R4008V1C-12 : 145mA(Max.) K6R4008V1C-15 : 135mA(Max.)
* Single 3.3±0.3V Power Supply
* TTL Compat
K6R4008V1C Datasheet (175.22 KB)
K6R4008V1C
Samsung semiconductor
175.22 KB
512kx8 bit high speed static.
www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera.
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