logo

K6R4016V1 Datasheet, Samsung semiconductor

K6R4016V1 Datasheet, Samsung semiconductor

K6R4016V1

datasheet Download (Size : 177.02KB)

K6R4016V1 Datasheet

K6R4016V1 ranges. equivalent, 1mx4 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges..

K6R4016V1

datasheet Download (Size : 177.02KB)

K6R4016V1 Datasheet

Features and benefits


* Fast Access Time 10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004C1D-10 : 65mA(Max.) Single 5.0V±10% Power Sup.

Application

The K6R4004C1D is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) A0 A1 A2 A3 A4 CS I/O1 1 2 3 4.

Description

The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read c.

Image gallery

K6R4016V1 Page 1 K6R4016V1 Page 2 K6R4016V1 Page 3

TAGS

K6R4016V1
1Mx4
Bit
High
Speed
Static
RAM5.0V
Operating.
Operated
Commercial
and
Industrial
Temperature
Ranges.
Samsung semiconductor

Manufacturer


Samsung semiconductor

Related datasheet

K6R4016V1C

K6R4016V1D

K6R4016C1D

K6R4004C1C-C

K6R4004C1C-E

K6R4004C1C-I

K6R4004C1D

K6R4004V1D

K6R4008C1C

K6R4008C1C-C

K6R4008C1C-E

K6R4008C1C-I

K6R4008C1D

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts