K7M161835B Datasheet 512Kx36 & 1Mx18 Flow-Through NtRAM

Manufacturer: Samsung Semiconductor

Overview: K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

Download the K7M161835B datasheet PDF. This datasheet also includes the K7M163635B variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

K7M161835B 512kx36 & 1mx18 flow-through ntram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7M161835B
Manufacturer	Samsung Semiconductor
File Size	427.71 KB
Description	512Kx36 & 1Mx18 Flow-Through NtRAM
Download	K7M161835B Download (PDF)

Key Features

VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.
TTL-Level Three-State Outputs.
100-TQFP-1420A (Lead and Lead free pac.

More Datasheets from Samsung Semiconductor

Part Number	Description
K7M161825A	512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825M	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163225A	512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M163625A	512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M163625M	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163635B	512Kx36 & 1Mx18 Flow-Through NtRAM
K7M321825M	1M x 36 & 2M x 18 Flow-Through NtRAM
K7M323625M	1Mx36 & 2Mx18 Flow-Through NtRAM
K7M801825B	256Kx36 & 512Kx18-Bit Flow Through NtRAM
K7M803625B	256Kx36 & 512Kx18-Bit Flow Through NtRAM