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K7M163635B - 512Kx36 & 1Mx18 Flow-Through NtRAM

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Samsung semiconductor

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K7M163635B 512Kx36 & 1Mx18 Flow-Through NtRAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K7M163635B

Datasheet Details

Part number	K7M163635B
Manufacturer	Samsung semiconductor
File Size	427.71 KB
Description	512Kx36 & 1Mx18 Flow-Through NtRAM
Datasheet	K7M163635B Datasheet
Additional preview pages of the K7M163635B datasheet.

Product details

Description

The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs.

Features

VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.
TTL-Level Three-State Outputs.
100-TQFP-1420A (Lead and Lead free pac.

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Published: Apr 19, 2011 |