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K7M163635B Datasheet 512Kx36 & 1Mx18 Flow-Through NtRAM

Manufacturer: Samsung Semiconductor

Overview: K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

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K7M163635B 512kx36 & 1mx18 flow-through ntram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7M163635B
Manufacturer	Samsung Semiconductor
File Size	427.71 KB
Description	512Kx36 & 1Mx18 Flow-Through NtRAM
Download	K7M163635B Download (PDF)

Key Features

VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.
TTL-Level Three-State Outputs.
100-TQFP-1420A (Lead and Lead free pac.

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