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K7N161831B - 512Kx36 & 1Mx18 Pipelined NtRAM

Description

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Features

  • VDD= 2.5 or 3.3V +/- 5% Power Supply.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no datacontention.
  • A interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mode.
  • 100-TQFP-1420A (Lead and Lead free package).
  • 165FBGA(11x15 ball aray) w.

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Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K7N161801A 512K x 36 & 1M x 18 Pipelined NtRAM
K7N161845A 512K x 36/32 & 1M x 18 Pipelined NtRAM
K7N163201A 512K x 36 & 1M x 18 Pipelined NtRAM
K7N163245A 512K x 36/32 & 1M x 18 Pipelined NtRAM
K7N163601A 512K x 36 & 1M x 18 Pipelined NtRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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