Part number: K8P5616UZB

Manufacturer: Samsung semiconductor

File Size: 1.38MB

Download: 📄 Datasheet

Description: 256Mb B-die Page NOR FLASH

TAGS

📁 Related Datasheet

K8P5516UZB - 256Mb B-die NOR FLASH (Samsung semiconductor)
Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www..net/ datasheet SAMSUNG ELECTRONIC.

K8P2716UZC - 128Mb C-die Page NOR Flash (Samsung semiconductor)
Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP(20x14mm), 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) h.

K8P2815UQC - 128Mb C-die NOR FLASH (Samsung semiconductor)
Rev. 1.0, May. 2010 K8P2815UQC 128Mb C-die NOR FLASH 60FBGA & 84FBGA, Page Mode 2.7V ~ 3.6V http://www..net/ datasheet SAMSUNG ELECTRONI.

K8006 - BASE UNIT (ETC)
Total solder points: 234 Difficulty level: beginner 1o 2o 3o 4o 5þ advanced BASE UNIT for HOME MODULAR LIGHT Features : SYSTEM K8006 Create your ow.

K80E07NE - TK80E07NE (Toshiba)
TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE „ E-Bike/UPS/Inverter Unit: mm Note : This product is des.

K80E08K3 - TK80E08K3 (Toshiba)
Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain.

K810 - N-Channel Silicon Power MOS FET (NEC)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.

K810A - Sony Ericsson (Sony)
Contents Getting started ......... 6 Assembly, SIM card, battery, turning on, start-up menu, calls. Sony Ericsson W810a Connectivity .......

K810I - Sony Ericsson (Sony)
Contents www..com Getting started ......... 4 Assembly, SIM card, battery, turning on, help, calls. Sony Ericsson K810i Connect.

K811 - 2SK811 (NEC)
.