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K8S6415ETB Datasheet (k8s6415exb) 64m Bit Multi Bank Nor Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K8S6415ET(B)B FLASH MEMORY Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

is added January 09,2006 ..

1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B

Key Features

  • Single Voltage, 1.7V to 1.95V for Read and Write operations.
  • Organization - 4,194,304 x 16 bit ( Word Mode Only).
  • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15.
  • Read While Program/Erase Operation.
  • Multiple Bank Architecture - 16 Banks (4Mb Partition).
  • OTP Block : Extra 256Byte block.
  • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www. DataSheet4U. com 90ns (54MHz) / 80ns (66MHz) - Sy.

More Datasheets from Samsung Semiconductor

Part Number Description
K8S6415EBB (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

K8S6415ETB Distributor