K9F1608W0A- Datasheet - Samsung semiconductor

2M x 8 Bit NAND Flash Memory

K9F1608W0A- Features

* Voltage Supply : 2.7V ~ 5.5V

* Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit

* Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register

* 264-Byte Page Read Operation -

K9F1608W0A- General Description

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typica.

K9F1608W0A- Datasheet (612.25 KB)

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K9F1608W0A-

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Samsung semiconductor

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2m x 8 bit nand flash memory.
www.DataSheet4U.com K9F1608W0A-TCB0, K9F1608W0A-TIB0 Document Title 2M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History.

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K9F1608W0A- Bit NAND Flash Memory Samsung semiconductor

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K9F1608W0A- Features

K9F1608W0A- General Description

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