Datasheet Details
- Part number
- K9F1608W0A-TIB0
- Manufacturer
- Samsung semiconductor
- File Size
- 443.54 KB
- Datasheet
- K9F1608W0A-TIB0_Samsungsemiconductor.pdf
- Description
- 2M x 8 Bit NAND Flash Memory
K9F1608W0A-TIB0 Description
K9F1608W0A-TCB0, K9F1608W0A-TIB0 Document Title 2M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.History 0.0 1.0 1.1 Initial .
The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit.
K9F1608W0A-TIB0 Features
* Voltage Supply : 2.7V ~ 5.5V
* Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit
* Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register
* 264-Byte Page Read Operation -
K9F1608W0A-TIB0 Applications
* and also the spare 8bytes of a page combined with the other 256 bytes can be utilized by system-level ECC. The K9F1608W0A is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiri
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