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K9F1608W0A-TIB0 Datasheet - Samsung semiconductor

K9F1608W0A-TIB0 2M x 8 Bit NAND Flash Memory

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typica.
K9F1608W0A-TCB0, K9F1608W0A-TIB0 Document Title 2M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet 1998. Data Sheet 1999. 1) Added CE don’ t care mode during the data-loading and reading 1.2 1.3 1) Revised real-time map-out algorithm(refer to technical notes) Changed device name - KM29W16000AT -> K9F1608W0A-TCB0 - KM29W16000AIT -> K9F1608W0A-TIB0 July 23th 1999 Sep.15th 1999 Final Final Draft Date April 10th 1998 July 14th 199.

K9F1608W0A-TIB0 Features

* Voltage Supply : 2.7V ~ 5.5V

* Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit

* Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register

* 264-Byte Page Read Operation -

K9F1608W0A-TIB0 Datasheet (443.54 KB)

Preview of K9F1608W0A-TIB0 PDF

Datasheet Details

Part number:

K9F1608W0A-TIB0

Manufacturer:

Samsung semiconductor

File Size:

443.54 KB

Description:

2m x 8 bit nand flash memory.

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K9F1608W0A-TIB0 Bit NAND Flash Memory Samsung semiconductor

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