Part number:
K9F1G08B0C
Manufacturer:
Samsung
File Size:
839.20 KB
Description:
Flash memory
K9F1G08B0C Datasheet (839.20 KB)
K9F1G08B0C Datasheet (839.20 KB)
K9F1G08B0C
Samsung
839.20 KB
Flash memory
* Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)
📁 Related Datasheet
K9F1G08D0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
(Samsung semiconductor)
..
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND.
K9F1G08Q0A - FLASH MEMORY
(Samsung semiconductor)
..
K9F1G08Q0A K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History.
K9F1G08Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
(Samsung semiconductor)
..
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND.
K9F1G08Q0M-PCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-PIB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-YCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
