K9F1G08B0C Datasheet (Samsung)

K9F1G08B0C, FLASH MEMORY

Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit NAND Flash Memory with spare 32M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed

K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K9F1G08B0C Features

* Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)