K9F1G08Q0A Datasheet (736.82 KB)
K9F1G08Q0A
Samsung semiconductor
736.82 KB
Flash memory.
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K9F1G08Q0A K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History.
* Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit
* Automatic Program and Erase - Page Program
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K9F1G08Q0M-PCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-PIB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-YCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-YIB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08B0C - FLASH MEMORY
(Samsung)
K9F1G08B0C K9F1G08U0C
Advance FLASH MEMORY
K9F1G08X0C
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.
