K9F1G08Q0A Datasheet (Samsung semiconductor)

K9F1G08Q0A, FLASH MEMORY

Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

A program operation can be performed in typical 300µs on the 2112-byte page and an erase operation can be performed in typical 2

www.DataSheet4U.com K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.

Initial issue 1.

The tADL(Address to Data Loading Time) is added.

- tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation.

Added Addressing method for program operation Draft Date Aug.

24.

2003 Jan.

27.

2004 Remark Advance Prelimi

K9F1G08Q0A Features

* Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V

* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program