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K9F1G08U0M, K9F1G08D0M Datasheet - Samsung semiconductor

K9F1G08U0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No History 0.0 1. Initial issue Draft Date July. 5. 2001 Remark Advance 0.1 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA > 3mA - Typ. value : 8mA > 4mA Nov. 5. 2001 2. AC parameter is changed. tRP(min.) : 30ns > 25ns 3. A recovery time of minimum 1µs is required before in.

K9F1G08D0M_Samsungsemiconductor.pdf

This datasheet PDF includes multiple part numbers: K9F1G08U0M, K9F1G08D0M. Please refer to the document for exact specifications by model.
K9F1G08U0M Datasheet Preview Page 2 K9F1G08U0M Datasheet Preview Page 3

Datasheet Details

Part number:

K9F1G08U0M, K9F1G08D0M

Manufacturer:

Samsung semiconductor

File Size:

790.90 KB

Description:

128m x 8 bit / 64m x 16 bit nand flash memory.

Note:

This datasheet PDF includes multiple part numbers: K9F1G08U0M, K9F1G08D0M.
Please refer to the document for exact specifications by model.

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TAGS

K9F1G08U0M K9F1G08D0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor

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