K9F1G08R0A Datasheet, Memory, Samsung semiconductor

K9F1G08R0A Features

• Memory
• Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
• Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Regis

PDF File Details

Part number:

K9F1G08R0A

Manufacturer:

Samsung semiconductor

File Size:

1.05MB

Download:

📄 Datasheet

Description:

128m x 8 bit / 256m x 8 bit nand flash memory. of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of Command Sets is added 1. CE access

K9F1G08R0A Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. 2 K9F1G08R0A K9F1G08U0A K9K2G08U1A PIN CON

TAGS

K9F1G08R0A

Samsung semiconductor

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