K9F1G08U0C Datasheet, Memory, Samsung

K9F1G08U0C Features

  • Memory
  • Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
  • Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register

PDF File Details

Part number:

K9F1G08U0C

Manufacturer:

Samsung

File Size:

839.20kb

Download:

📄 Datasheet

Description:

Flash memory. Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective

Datasheet Preview: K9F1G08U0C 📥 Download PDF (839.20kb)
Page 2 of K9F1G08U0C Page 3 of K9F1G08U0C

K9F1G08U0C Application

  • Applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governm

TAGS

K9F1G08U0C
FLASH
MEMORY
Samsung

📁 Related Datasheet

K9F1G08U0A - FLASH MEMORY (Samsung semiconductor)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NA.

K9F1G08U0A - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.

K9F1G08U0B - Flash Memory (Samsung Electronics)
.. K9F1G08U0B FLASH MEMORY K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO.

K9F1G08U0D - 1Gb NAND Flash (Samsung)
Rev. 1.1, Nov. 2010 K9F1G08U0D 1Gb NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, IN.

K9F1G08U0E - 1Gb E-die NAND Flash (Samsung semiconductor)
SAMSUNG CONFIDENTIAL Rev. 1.11, Aug. 2013 K9F1G08U0E 1Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE.

K9F1G08U0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
.. K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FL.

K9F1G08U0M-FCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-FIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-PCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-PIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

Stock and price

part
Samsung Semiconductor
Bristol Electronics
K9F1G08U0C-PCB0000
25 In Stock
0
Unit Price : $0
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts