K9F1G08U0A Datasheet - Samsung semiconductor

FLASH MEMORY

K9F1G08U0A Features

* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit

K9F1G08U0A General Description

: Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 Improvement schedule : The components targeted to meet the specification is scheduled to be.

K9F1G08U0A Datasheet (713.92 KB)

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Datasheet Details

Part number:

K9F1G08U0A

Manufacturer:

Samsung semiconductor

File Size:

713.92 KB

Description:

Flash memory.
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NA.

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K9F1G08U0A FLASH MEMORY Samsung semiconductor

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K9F1G08U0A Features

K9F1G08U0A General Description

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