K9F1G08U0M-FIB0 Datasheet, Errata, Samsung

PDF File Details

Part number:

K9F1G08U0M-FIB0

Manufacturer:

Samsung

File Size:

700.41kb

Download:

📄 Datasheet

Description:

1gb 1.8v nand flash errata. : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1G08Q0M

TAGS

K9F1G08U0M-FIB0

Samsung

📁 Related Datasheet

K9F1G08U0M-FCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-PCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-PIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-VCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-VIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-YCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M-YIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08U0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
.. K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FL.

K9F1G08U0A - FLASH MEMORY (Samsung semiconductor)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NA.

K9F1G08U0A - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.