Part number:
K9F1G08Q0M
Manufacturer:
Samsung semiconductor
File Size:
790.98 KB
Description:
128m x 8 bit / 64m x 16 bit nand flash memory
K9F1G08Q0M Datasheet (790.98 KB)
K9F1G08Q0M Datasheet (790.98 KB)
K9F1G08Q0M
Samsung semiconductor
790.98 KB
128m x 8 bit / 64m x 16 bit nand flash memory
* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Registe
📁 Related Datasheet
K9F1G08Q0A - FLASH MEMORY
(Samsung semiconductor)
..
K9F1G08Q0A K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History.
K9F1G08Q0M-PCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-PIB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-YCB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08Q0M-YIB0 - 1Gb 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAN.
K9F1G08B0C - FLASH MEMORY
(Samsung)
K9F1G08B0C K9F1G08U0C
Advance FLASH MEMORY
K9F1G08X0C
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.
