K9F1G08U0B Datasheet - Samsung Electronics

K9F1G08U0B Flash Memory

Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed .

www.DataSheet4U.com K9F1G08U0B FLASH MEMORY K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional inf.

K9F1G08U0B Features

* Voltage Supply - 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V

* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - P

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