K9F1G08U0B Datasheet - Samsung Electronics

Flash Memory

K9F1G08U0B Features

* Voltage Supply - 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V

* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - P

K9F1G08U0B General Description

Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed .

K9F1G08U0B Datasheet (624.88 KB)

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K9F1G08U0B

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Samsung Electronics

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624.88 KB

Description:

Flash memory.
www.DataSheet4U.com K9F1G08U0B FLASH MEMORY K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO.

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K9F1G08U0B Flash Memory Samsung Electronics

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K9F1G08U0B Features

K9F1G08U0B General Description

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