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K9F1G08U0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Download the K9F1G08U0M datasheet PDF. This datasheet also covers the K9F1G08D0M variant, as both devices belong to the same 128m x 8 bit / 64m x 16 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K9F1G08D0M_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K9F1G08U0M-FCB0 1Gb 1.8V NAND Flash Errata Samsung
K9F1G08U0M-FIB0 1Gb 1.8V NAND Flash Errata Samsung
K9F1G08U0M-PCB0 1Gb 1.8V NAND Flash Errata Samsung
K9F1G08U0M-PIB0 1Gb 1.8V NAND Flash Errata Samsung
K9F1G08U0M-VCB0 1Gb 1.8V NAND Flash Errata Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K9F1G08U0A FLASH MEMORY
K9F1G08U0A 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0E 1Gb E-die NAND Flash
K9F1G08D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0A FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No History 0.0 1. Initial issue Draft Date July. 5. 2001 Remark Advance 0.1 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA Nov. 5. 2001 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. Dec. 4. 2001 0.2 1. ALE status fault in ’Random data out in a page’ timing diagram(page 19) is fixed. 0.3 1.