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K9F1G08U0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

This page provides the datasheet information for the K9F1G08U0M, a member of the K9F1G08D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory family.

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Part number K9F1G08U0M
Manufacturer Samsung semiconductor
File Size 790.90 KB
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No History 0.0 1. Initial issue Draft Date July. 5. 2001 Remark Advance 0.1 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA Nov. 5. 2001 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. Dec. 4. 2001 0.2 1. ALE status fault in ’Random data out in a page’ timing diagram(page 19) is fixed. 0.3 1.
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