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K9F1G08R0A

Manufacturer: Samsung Semiconductor

K9F1G08R0A datasheet by Samsung Semiconductor.

K9F1G08R0A datasheet preview

K9F1G08R0A Datasheet Details

Part number K9F1G08R0A
Datasheet K9F1G08R0A_Samsungsemiconductor.pdf
File Size 1.05 MB
Manufacturer Samsung Semiconductor
Description 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08R0A page 2 K9F1G08R0A page 3

K9F1G08R0A Overview

of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of mand Sets is added.

K9F1G08R0A Key Features

  • Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
  • Organization
  • Memory Cell Array : (128M + 4,096K)bit x 8bit
  • Data Register : (2K + 64)bit x8bit
  • Cache Register : (2K + 64)bit x8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation
  • Page Size : 2K-Byte

K9F1G08R0B from other manufacturers

View K9F1G08R0B datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung Electronics Logo K9F1G08R0B FLASH MEMORY Samsung Electronics
Samsung Semiconductor logo - Manufacturer

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K9F1G08D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0A FLASH MEMORY
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08U0A FLASH MEMORY
K9F1G08U0A 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0E 1Gb E-die NAND Flash
K9F1G08U0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16U0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

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