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K9F1G08Q0A Datasheet Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .. K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. The tADL(Address to Data Loading Time) is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation. 2. Added Addressing method for program operation Draft Date Aug. 24. 2003 Jan. 27. 2004 Remark Advance Preliminary 0.2 0.3 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(TSOP1, WSOP1) Dimension Change Apr. 23. 2004 May. 19. 2004 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 .. K9F1G08Q0A K9F1G08U0A FLASH MEMORY 128M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F1G08Q0A K9F1G08U0A-Y,P K9F1G08U0A-V,F Vcc Range 1.70 ~ 1.95V 2.7 ~ 3.

Key Features

  • Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 30ns(Min. ) : (K9F1G08U0A) 50ns(Min. ) : (K9F1G08Q0A).

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