K9F1G08Q0A
FEATURES
- Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
- Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : 2K-Byte
- Random Read : 25µs(Max.)
- Serial Access : 30ns(Min.) : (K9F1G08U0A) 50ns(Min.) : (K9F1G08Q0A)
- Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- mand Register Operation
- Cache Program Operation for High Performance Program
- Intelligent Copy-Back Operation
- Unique ID for Copyright Protection
- Package :
- K9F1G08U0A-YCB0/YIB0 48
- Pin TSOP I (12 x 20 /...
