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K9F1G08Q0A - FLASH MEMORY

Datasheet Summary

Description

Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 30ns(Min. ) : (K9F1G08U0A) 50ns(Min. ) : (K9F1G08Q0A).

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Datasheet Details

Part number K9F1G08Q0A
Manufacturer Samsung semiconductor
File Size 736.82 KB
Description FLASH MEMORY
Datasheet download datasheet K9F1G08Q0A Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. The tADL(Address to Data Loading Time) is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation. 2. Added Addressing method for program operation Draft Date Aug. 24. 2003 Jan. 27. 2004 Remark Advance Preliminary 0.2 0.3 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(TSOP1, WSOP1) Dimension Change Apr. 23. 2004 May. 19. 2004 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.
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