• Part: K9F1G08U0B
  • Manufacturer: Samsung Electronics
  • Size: 624.88 KB
Download K9F1G08U0B Datasheet PDF
K9F1G08U0B page 2
Page 2
K9F1G08U0B page 3
Page 3

K9F1G08U0B Description

Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms.

K9F1G08U0B Key Features

  • Voltage Supply
  • 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V
  • Organization
  • Memory Cell Array : (128M + 4M) x 8bit
  • Data Register : (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation
  • Page Size : (2K + 64)Byte

K9F1G08U0B Applications

  • Samsung Electronics reserves the right to change products or specification without notice