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K9F1G08U0C - FLASH MEMORY

This page provides the datasheet information for the K9F1G08U0C, a member of the K9F1G08B0C FLASH MEMORY family.

Datasheet Summary

Description

Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit NAND Flash Memory with spare 32M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

  • Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase T.

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Datasheet preview – K9F1G08U0C

Datasheet Details

Part number K9F1G08U0C
Manufacturer Samsung
File Size 839.20 KB
Description FLASH MEMORY
Datasheet download datasheet K9F1G08U0C Datasheet
Additional preview pages of the K9F1G08U0C datasheet.

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Full PDF Text Transcription

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K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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