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K9F1G08U0C - FLASH MEMORY

Download the K9F1G08U0C datasheet PDF. This datasheet also covers the K9F1G08B0C variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit NAND Flash Memory with spare 32M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Key Features

  • Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9F1G08B0C-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.