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K9F1G08D0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

General Description

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Key Features

  • Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
K9F1G08Q0A FLASH MEMORY
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08R0A 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0A FLASH MEMORY
K9F1G08U0A 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

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www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17. Draft Date July. 5. 2001 Nov. 5. 2001 Remark Advance Dec. 4. 2001 0.2 1. ALE status fault in ’ Random data out in a page’ timing diagram(page 19) is fixed. 1.