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K9F1G08U0A - FLASH MEMORY

This page provides the datasheet information for the K9F1G08U0A, a member of the K9F FLASH MEMORY family.

Datasheet Summary

Description

: Some of AC characteristics are not meeting the specification.

Features

  • Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit.
  • Automatic Program and Erase - Pag.

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Datasheet preview – K9F1G08U0A

Datasheet Details

Part number K9F1G08U0A
Manufacturer Samsung semiconductor
File Size 713.92 KB
Description FLASH MEMORY
Datasheet download datasheet K9F1G08U0A Datasheet
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Full PDF Text Transcription

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 Improvement schedule : The components targeted to meet the specification is scheduled to be available by workweek 25 along with the final specification values. Workaround : Relax the relevant timing parameters according to the table. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.samsung.
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