K9F1G08D0M Datasheet, Memory, Samsung semiconductor

K9F1G08D0M Features

• Memory
• Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X

PDF File Details

Part number:

K9F1G08D0M

Manufacturer:

Samsung semiconductor

File Size:

790.90kb

Download:

📄 Datasheet

Description:

128m x 8 bit / 64m x 16 bit nand flash memory. Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffectiv

K9F1G08D0M Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. 3 www.DataSheet4U.com K9F1G08Q0M K9F1G16Q

TAGS

K9F1G08D0M

Samsung semiconductor

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