Datasheet4U Logo Datasheet4U.com

K9F1G08R0B

FLASH MEMORY

K9F1G08R0B Features

* Voltage Supply www.DataSheet4U.com - 1.8V Device(K9F1G08R0B) : 1.65V ~ 1.95V

* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Pag

K9F1G08R0B General Description

Offered in 128Mx8bit, the K9F1G08R0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed .

K9F1G08R0B Datasheet (848.93 KB)

Preview of K9F1G08R0B PDF

Datasheet Details

Part number:

K9F1G08R0B

Manufacturer:

Samsung Electronics

File Size:

848.93 KB

Description:

Flash memory.
K9F1G08R0B FLASH MEMORY K9F1G08R0B www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO .

📁 Related Datasheet

K9F1G08R0A - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.

K9F1G08B0C - FLASH MEMORY (Samsung)
K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.

K9F1G08D0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
.. K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND.

K9F1G08Q0A - FLASH MEMORY (Samsung semiconductor)
.. K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History.

K9F1G08Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
.. K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND.

K9F1G08Q0M-PCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08Q0M-PIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G08Q0M-YCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

TAGS

K9F1G08R0B FLASH MEMORY Samsung Electronics

Image Gallery

K9F1G08R0B Datasheet Preview Page 2 K9F1G08R0B Datasheet Preview Page 3

K9F1G08R0B Distributor