K9F1G08R0B Datasheet - Samsung Electronics

K9F1G08R0B FLASH MEMORY

Offered in 128Mx8bit, the K9F1G08R0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed .

K9F1G08R0B FLASH MEMORY K9F1G08R0B www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional info.

K9F1G08R0B Features

* Voltage Supply www.DataSheet4U.com - 1.8V Device(K9F1G08R0B) : 1.65V ~ 1.95V

* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Pag

K9F1G08R0B_SamsungElectronics.pdf

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Datasheet Details

Part number:

K9F1G08R0B

Manufacturer:

Samsung Electronics

File Size:

848.93 KB

Description:

Flash memory.

K9F1G08R0B Distributor

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K9F1G08R0B K9F1G08R0B FLASH MEMORY Samsung Electronics