K9F2G08U0B - FLASH MEMORY

Product Overview

Samsung Electronics

Part number	K9F2G08U0B
Manufacturer	Samsung Electronics
File Size	862.61 KB
Description	FLASH MEMORY
Datasheet	K9F2G08U0B Datasheet
Additional preview pages of the K9F2G08U0B datasheet.

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit.

Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V.
Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

📁 Similar Datasheet

Other Datasheets by Samsung Electronics

Published: Nov 1, 2010 |