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K9F2G08U0B

FLASH MEMORY

K9F2G08U0B Features

* Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V

* Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4

K9F2G08U0B General Description

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed .

K9F2G08U0B Datasheet (862.61 KB)

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Datasheet Details

Part number:

K9F2G08U0B

Manufacturer:

Samsung Electronics

File Size:

862.61 KB

Description:

Flash memory.
K9F2G08B0B K9F2G08U0B Preliminary FLASH MEMORY K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT .

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K9F2G08U0B FLASH MEMORY Samsung Electronics

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