K9F2G08U0B Datasheet (Samsung Electronics)

K9F2G08U0B, FLASH MEMORY

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed

K9F2G08B0B K9F2G08U0B Preliminary FLASH MEMORY K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K9F2G08U0B Features

* Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V

* Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4