K9F2G16U0M FLASH MEMORY

Samsung semiconductor

Description

K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History .
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity.

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Datasheet Specifications

Part number: K9F2G16U0M
Manufacturer: Samsung semiconductor
File Size: 601.94 KB
Datasheet: K9F2G16U0M_Samsungsemiconductor.pdf
Description: FLASH MEMORY

Features

* Voltage Supply -1.8V device(K9F2GXXQ0M): 1.70V~1.95V -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9F2G08X0M): (2K + 64)bi

Applications

* such as solid state file storage and other portable applications requiring non-volatility. 3 K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M PIN CONFIGURATION (TSOP1) K9F2GXXX0M-YCB0,PCB0/YIB0,PIB0 X16 N. C N. C N. C N. C N. C N. C R/B RE CE N. C N. C Vcc Vss N. C N. C CLE ALE WE WP N. C N. C N. C N. C N. C Prelimi

K9F2G16U0M Distributors

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K9F2G16U0M FLASH MEMORY Samsung semiconductor

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