K9F2808U0C Datasheet (Samsung)

K9F2808U0C, FLASH MEMORY

Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity.

The device is offered in 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

A program operation can be performed in typical 200µs on the 528-byte page and an erase ope

K9F2808U0C FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No.

History 0.0 1.0 Initial issue.

TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm > 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC > (after) Vss 2.

Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3.

Add the data protection Vcc guidence for 1.8V device - below about 1.1V.

(Page 33) The min.

Vcc value 1.8V devices is c

K9F2808U0C Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifi